Still have to create contacts for the source, drain and the body terminals of Oneįinger is ok for this example, but looking in to layout with multiple fingers This ‘folds’ the mos onto itself with alternatingĭrain and source areas and multiple poly areas as the gate is split up. This is done to both save space and decrease the gate resistance. The resulting transistor isĪnalog design, long transistors are often split into smaller ones using Of active is 0.055um as required by the DRC rules). Use the same procedure as described earlier toĭraw the pwell (Note that the minimum well enclosure Now, we have formed the channel and the sourceĪnd drain diffusion regions. Make sure that the length of the gate is set to 60nm to create the transistor "poly" in the LSW and drawing another rectangle to form the gate. Next step is to draw the gate of the transistor. These form the source and drain diffusion regions of the NMOS transistor we are The active and nimplant layers must overlap, and Draw another rectangle of the nimplant layer. You can check the dimensions of the transistor using a ruler You can change the width and height by editing the properties (‘q’) or Transistor has a width of 1.2um, so make sure the width of the active layer isġ.2um. To measure the distance between twoo points, you can press "k" or Tool-> Creat Ruler. Strongly encouraged to get familiar with other keyboard shortcuts as this will YouĬan also adjust the dimension by pressing "s" or Edit->Stretch YouĬan move objects around by pressing "m" or Edit->move. You draw the rectangle, you can select it and press "q" orĮdit->Basic->Properties to change the dimensions of the rectangle. When you release the button, the area you selected will be zoomed in. You can also draw a boxĪround the area you want to zoom in by holding on to your right mouse clickīutton. The editor by using the zoom Rbuttons located on the Just draw a rectangle of any arbitrary dimension. This point, do not worry about drawing the rectangle to exact dimensions and The purpose is used to indicate special functionality "net", and "pin" next to each entry in the LSW. Selecting "active" on the LSW and drawing a rectangle on the layout You can start designing the transistor by Transistor uses layers pwell, active, nimplant, 2.1ĭesign used an NMOS transistor with 60nm length and 1.2um width. These are the rules for spacing, minimum dimensions, etc that our layout must meet. It will also be of interest to read the design rules for the process. Snap and Y snap spacing in 5nm, which is 0.005um. Shares the same X Snap and Y Snap spacing to avoid grid errors. Make sure all the files of the same project From Options -> Display you can find the display options.
#NMOS TRANSISTOR TYPICAL LENGTH HOW TO#
Sections will describe how to make these components.īefore beginning your layout, you will need to configure the display andĮditor settings. Clickįor this inverter we will need to layout an nmos "layout", and Type: Layout and Application open with " Layout L". Highlight your inverter schematic library (TEST ifĬhoose library TEST, cell name "inverter", view name The next section explains how to make each of the separateĬreate a new cell, where you will layout the inverter: The following picture shows a layout for the inverting amplifier, ready forĮxtracting. This is NOT an example on layout techniques, but more of a generalizedĮxample to help get you familiar with Virtuoso and laying-out some basic There are many considerations to take into account when deciding how to do a It will go over how toĬreate mosfets, resistors, and capacitors in our process. This example will help you to create a layoutįor the inverter you designed in the first example.
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